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FDP054N10 N-Channel PowerTrench(R) MOSFET
April 2009
FDP054N10
N-Channel PowerTrench(R) MOSFET
100V, 144A, 5.5m Features
* RDS(on) = 4.6m ( Typ.)@ VGS = 10V, ID = 75A * Fast Switching Speed * Low Gate Charge * High Performance Trench Technology for Extremely Low RDS(on) * High Power and Current Handling Capability * RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Application
DC to DC Converters / Synchronous Rectification
D
G G DS
TO-220
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage - Continuous (TC = 25oC, Silicon Limited) Drain Current Drain Current Single Pulsed Avalanche Energy Peak Diode Avalanche Energy Power Dissipation (TC = 25oC) - Derate above 25oC - Continuous (TC = 100oC, Silicon Limited) - Continuous (TC = 25oC, Package Limited) - Pulsed (Note 1) (Note 2) (Note 3) Ratings 100 20 144* 102 120 576 1153 3.6 263 1.75 -55 to +175 300 A mJ V/ns W W/oC
o o
Units V V A
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
C C
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol RJC RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Ratings 0.57 62.5 Units
o
C/W
(c)2009 Fairchild Semiconductor Corporation FDP054N10 Rev. A
1
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FDP054N10 N-Channel PowerTrench(R) MOSFET
Package Marking and Ordering Information
Device Marking FDP054N10 Device FDP054N10 Package TO-220 Reel Size Tape Width Quantity 50
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250A, VGS = 0V, TC = 25oC ID = 250A, Referenced to 25oC VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V, TC = 150oC VGS = 20V, VDS = 0V 100 0.01 1 500 100 V V/oC A nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 75A VGS = 10V, ID = 75A (Note 4) 2.5 3.5 4.6 192 4.5 5.5 V m S
Dynamic Characteristics
Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 80V, ID = 75A, VGS = 10V (Note 4,5) VDS = 25V, VGS = 0V f = 1MHz 9985 935 390 156 53 48 13280 1245 585 203 pF pF pF nC nC nC
Switching Characteristics
td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 50V, ID = 75A VGS = 10V, RGEN = 4.7 (Note 4,5) 44 92 80 39 98 194 170 88 ns ns ns ns
Drain-Source Diode Characteristics
IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 75A VGS = 0V, ISD =75A dIF/dt = 100A/s (Note 4) 57 121 144 576 1.3 A A V ns nC
Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 0.41mH, IAS = 75A, VDD = 50V, RG = 25, Starting TJ = 25C 3: ISD 75A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4: Pulse Test: Pulse width 300s, Duty Cycle 2% 5: Essentially Independent of Operating Temperature Typical Characteristics
FDP054N10 Rev. A
2
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FDP054N10 N-Channel PowerTrench(R) MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
1000
VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V
Figure 2. Transfer Characteristics
1000
* Notes : 1. VDS = 20V 2. 250s Pulse Test
ID, Drain Current[A]
ID, Drain Current[A]
100
150 C
o
100
25 C
o
*Notes: 1. 250s Pulse Test 2. TC = 25 C
o
10
-55 C
o
10 0.1
1
1 VDS, Drain-Source Voltage[V]
6
3
4 5 6 VGS, Gate-Source Voltage[V]
7
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
7
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
1000
RDS(on) [m], Drain-Source On-Resistance
6
VGS = 10V
IS, Reverse Drain Current [A]
100
150 C
o
5
25 C
o
10
Notes: 1. VGS = 0V
2. 250s Pulse Test
4
VGS = 20V
* Note : TC = 25 C
o
3 0 100 200 ID, Drain Current [A] 300 400
1 0.2
0.4 0.6 0.8 1.0 VSD, Body Diode Forward Voltage [V]
1.2
Figure 5. Capacitance Characteristics
100000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 6. Gate Charge Characteristics
10
VGS, Gate-Source Voltage [V]
VDS = 20V VDS = 50V VDS = 80V
8
Ciss
Capacitances [pF]
10000
6
Coss
4
1000
* Note: 1. VGS = 0V 2. f = 1MHz
Crss
2
* Note : ID = 75A
100 0.1
0
1 10 VDS, Drain-Source Voltage [V]
30
0
30
60 90 120 Qg, Total Gate Charge [nC]
150
180
FDP054N10 Rev. A
3
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FDP054N10 N-Channel PowerTrench(R) MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2 BVDSS, [Normalized] Drain-Source Breakdown Voltage
Figure 8. On-Resistance Variation vs. Temperature
2.4 RDS(on), [Normalized] Drain-Source On-Resistance
2.0
1.1
1.6
1.0
1.2
0.9
* Notes : 1. VGS = 0V 2. ID = 10mA
0.8
* Notes : 1. VGS = 10V 2. ID = 75A
0.8 -80
-40
0 40 80 120 160 o TJ, Junction Temperature [ C]
200
0.4 -80
-40
0 40 80 120 160 o TJ, Junction Temperature [ C]
200
Figure 9. Maximum Safe Operating Area
1000
10s 100s 1ms
Figure 10. Maximum Drain Current vs. Case Temperature
150
ID, Drain Current [A]
ID, Drain Current [A]
100
10
Operation in This Area is Limited by R DS(on)
10ms DC
100
Limitted by package
1
*Notes:
50
0.1
1. TC = 25 C 2. TJ = 175 C 3. Single Pulse
o
o
0.01 0.1
1 10 VDS, Drain-Source Voltage [V]
100 200
0 25
50 75 100 125 o TC, Case Temperature [ C]
150
175
Figure 11. Transient Thermal Response Curve
1
Thermal Response [ZJC]
0.5 0.2 0.1 0.05 0.02 0.01
0.1
PDM t1 t2
o
0.01
* Notes :
Single pulse
1. ZJC(t) = 0.57 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZJC(t)
0.001 -5 10
10
-4
10 10 10 Rectangular Pulse Duration [sec]
-3
-2
-1
1
10
FDP054N10 Rev. A
4
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FDP054N10 N-Channel PowerTrench(R) MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP054N10 Rev. A
5
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FDP054N10 N-Channel PowerTrench(R) MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ V
DS
_ I
SD
L D r iv e r R
G
S am e T ype as DUT
V
DD
V
GS
* d v / d t c o n t r o lle d b y R G * I S D c o n t r o lle d b y p u ls e p e r io d
V GS ( D r iv e r )
G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d
10V
I F M , B o d y D io d e F o r w a r d C u r r e n t
I SD (DUT ) IR M
d i/ d t
B o d y D io d e R e v e r s e C u r r e n t
V DS (DUT )
B o d y D io d e R e c o v e r y d v / d t
V
SD
V
DD
B o d y D io d e F o r w a r d V o lt a g e D r o p
FDP054N10 Rev. A
6
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FDP054N10 N-Channel PowerTrench(R) MOSFET
Mechanical Dimensions
TO-220
9.90 0.20 1.30 0.10 2.80 0.10 (8.70) o3.60 0.10 (1.70) 4.50 0.20
1.30 -0.05
+0.10
9.20 0.20
(1.46)
13.08 0.20
(1.00)
(3.00)
15.90 0.20
1.27 0.10
1.52 0.10
0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]
10.08 0.30
18.95MAX.
(3.70)
(45 )
0.50 -0.05
+0.10
2.40 0.20
10.00 0.20
FDP054N10 Rev. A
7
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FDP054N10 N-Channel PowerTrench(R) MOSFET
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Auto-SPMTM PowerTrench(R) F-PFSTM The Power Franchise(R) Build it NowTM PowerXSTM FRFET(R) (R) CorePLUSTM Global Power ResourceSM Programmable Active DroopTM (R) CorePOWERTM Green FPSTM QFET TinyBoostTM CROSSVOLTTM Green FPSTM e-SeriesTM QSTM TinyBuckTM CTLTM GmaxTM Quiet SeriesTM TinyLogic(R) Current Transfer LogicTM GTOTM RapidConfigureTM (R) TINYOPTOTM EcoSPARK IntelliMAXTM TinyPowerTM EfficentMaxTM ISOPLANARTM TM TinyPWMTM Saving our world, 1mW /W /kW at a timeTM EZSWITCHTM * MegaBuckTM TinyWireTM TM* SmartMaxTM MICROCOUPLERTM TriFault DetectTM SMART STARTTM MicroFETTM TRUECURRENTTM* SPM(R) MicroPakTM (R) SerDesTM STEALTHTM MillerDriveTM Fairchild(R) SuperFETTM MotionMaxTM Fairchild Semiconductor(R) SuperSOTTM-3 Motion-SPMTM FACT Quiet SeriesTM SuperSOTTM-6 OPTOLOGIC(R) UHC(R) (R) FACT(R) OPTOPLANAR Ultra FRFETTM SuperSOTTM-8 (R) FAST(R) UniFETTM SupreMOSTM FastvCoreTM VCXTM SyncFETTM FETBenchTM VisualMaxTM Sync-LockTM PDP SPMTM FlashWriter(R) * XSTM (R)* Power-SPMTM FPSTM
tm
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I40
Preliminary
First Production
No Identification Needed Obsolete
Full Production Not In Production
FDP054N10 Rev. A
8
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